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1 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com datasheet subject to change without notice. primary applications product description key features measured performance 17 C 37 ghz mpa/multiplier ? rf output frequency range: 17 - 37 ghz ? 20 db nominal gain ? 22 dbm nominal output maximum power ? 2x and 3x multiplier function ? bias: vd = 5v, id = 140ma ? package dimensions: 3.0 x 3.0 x 1.1 mm ? point - to - point radio ? ew ? instrumentation ? frequency multiplier bias at vd = 5v, id = 140ma and vg = - 0.75v (typical) the triquint tga4030 - sm is a medium power amplifier and multiplier for wide band 17 C 37 ghz applications. the part is designed using triquints 0.15um power phemt process. the tga4030 - sm provides a nominal 20 db small signal gain with 22 dbm maximum output power. for 2x and 3x multiplier function, tga4030 - sm provides 15 dbm typical output power @ 9 dbm pin. this part is ideally suited for applications such as point - to - point radio, ew, instrumentation and frequency multipliers. evaluation boards are available upon request. lead - free and rohs compliant bias at vd = 5v, id = 140ma and vg = - 0.75v (typical) -15 -10 -5 0 5 10 15 20 25 17 21 25 29 33 37 frequency (ghz) s21 (db) -25 -20 -15 -10 -5 0 5 10 15 s11 & s22 (db) s21 s11 s22 10 12 14 16 18 20 22 24 17 19 21 23 25 27 29 31 33 35 37 39 frequency (ghz) psat (dbm) psat
2 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd - vg drain to gate voltage range 8v vd drain supply voltage range 6 v vg gate supply voltage range - 3 C 0 v id drain current 400 ma |ig| gate current 1.38 ma pin input continuous wave power 20 dbm symbol parameter value vd drain voltage 5 v id drain current 140 ma vg gate voltage (typical) - 0.75 v vd1 drain voltage 1 v vg1 gate voltage - 1.1 v 1/ these ratings represent the maximum operable values for this device. stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. see bias plan on page 14 for amplifier and 2x multiplier, page 15 for 3x multiplier
3 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com parameter amplifier 2x multiplier 3x multiplier units rf output frequencies 17 - 37 22 - 38 23 - 31 ghz s21, small signal gain 20 - - db s11, input return loss 10 - - db s22, output return loss 5 5 5 db psat, maximum output power 22 dbm p1db, output power @ 1 db gain compression 18 dbm imd3@ 11 dbm pout/tone 30 dbc output power @ pin = 9 dbm - 15 15 dbm conversion gain - 9 5 db gain temperature coefficient - 0.04 db/ o c table iii rf characterization table bias: vd=5v, id= 140ma, vg = - 0.75v (typical), t a = 25 ?
4 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com table iv power dissipation and thermal properties 1/ for a median life, tm, of 1e+6 hours, power dissipation is limited to pd(max) = (tchannel oc C tbase oc)/jc. 2/ channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 1.2 w tchannel = 150 oc tm = 1.0e+6 hrs 1/ 2/ thermal resistance, jc vd = 5v id = 140ma pd = 0.7w jc = 66.7 (oc/w) tchannel = 116 oc tm = 2.4e+7 hrs mounting temperature 30 seconds 260 oc max storage temperature - 65 to 150 oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 baseplate temp (c) power dissipated (w) series1
5 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured data bias conditions: vd = 5v, idq = 140 ma, vg = - 0.75 v (typical) this is evaluation board s - parameter this is device s - parameter 0 4 8 12 16 20 24 28 10 15 20 25 30 35 40 45 frequency (ghz) s21 (db) 25 c -40 c 70 c -15 -10 -5 0 5 10 15 20 25 10 15 20 25 30 35 40 45 frequency (ghz) s21 (db) -25 -20 -15 -10 -5 0 5 10 15 s11 & s22 (db) s 2 1 s 1 1 s 2 2
6 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured data bias conditions: vd = 5v, idq = 140 ma, vg = - 0.75 v (typical) 10 12 14 16 18 20 22 24 17 19 21 23 25 27 29 31 33 35 37 39 frequency (ghz) psat (dbm) psat 10 12 14 16 18 20 22 24 17 19 21 23 25 27 29 31 33 35 37 frequency (ghz) p1db (dbm) p1db
7 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured data bias conditions: vd = 5v, idq = 140 ma, vg = - 0.75 v (typical) 0.1 0.15 0.2 0.25 0.3 0.35 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 pin (dbm) id (a) 17ghz 21ghz 25ghz 29ghz 33ghz 37ghz 0 2 4 6 8 10 12 14 16 18 17 19 21 23 25 27 29 31 33 35 37 39 41 frequency (ghz) noise figure (db) series1
8 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured data bias conditions: vd = 5v, idq = 140 ma, vg = - 0.75 v (typical) 0 5 10 15 20 25 30 35 40 45 50 -3 0 3 6 9 12 15 18 21 pout/tone (dbm) imd3 (dbc) 27 ghz 29 ghz 31 ghz 33 ghz 35 ghz 37 ghz 39 ghz 0 10 20 30 40 50 60 -6 -3 0 3 6 9 12 15 18 pout/tone (dbm) imd3 (dbc) 17 ghz 19 ghz 21 ghz 23 ghz 25 ghz
9 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured data bias conditions: vd = 5v, idq = 140 ma, vg = - 0.75 v (typical) 10 12 14 16 18 20 22 24 26 28 30 17 19 21 23 25 27 29 31 33 35 37 frequency (ghz) toi (dbm) series1
10 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured 2x multiplier data bias conditions: vd = 5 v, idq = 120 ma, vg1 = - 1.1 v, pin = 9 dbm -35 -30 -25 -20 -15 -10 -5 0 5 10 15 16 18 20 22 24 26 28 30 32 34 36 38 40 42 frequency (ghz) conversion gain (db) pin @ 9 dbm 0 2 4 6 8 10 12 14 16 18 20 22 16 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) pout (dbm) pin @ 9 dbm
11 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com measured 3x multiplier data bias conditions: vd = 5 v, vd1 = 1 v, idq = 160 ma, pin = 9 dbm 0 2 4 6 8 10 12 14 16 18 20 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) pout (dbm) pin @ 9 dbm -35 -30 -25 -20 -15 -10 -5 0 5 10 15 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) conversion gain (db) pin @ 9 dbm
12 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing pin description pin description 1, 2, 4, 9, 11,12 gnd 7 vg 3 rf in 10 rf out 5 vg1 14 vd 6, 8, 13, 15 n/c 16 vd1 pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 pin 7 pin 8 pin 12 pin 11 pin 10 pin 9 pin 16 pin 15 pin 14 pin 13 gnd
13 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com mechanical drawing units: millimeters
14 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com evaluation board 0402 0.01 uf capacitors board material is 8 mil rogers ro4003
15 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com recommended power supply connection diagram amplifier & 2x multiplier amplifier set vd = 5.0v vary (vg + vg1) to achieve id = 140ma vd vg 2x multiplier set vd = 5.0v set vg1 = - 1.1v vary vg to achieve id = 120ma vd vg vg1 bias procedure powering up: set vg (starting from 0v) to C 1.5v increase vd (starting from 0v) to desired voltage 5v make vg more positive, ending up at approx C 0.75v. id ~140ma. apply rf (max input level +20dbm). powering down: remove rf reduce vd to 0v set vg to - 1.5v.
16 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com recommended power supply connection diagram 3x multiplier vd vg vd1 3x multiplier set vd = 5.0v set vd1 = 1.0v vary (vg + vg1) to achieve(id + id1) = 160ma
17 tga4030 - sm april 2012 ? rev a triquint semiconductor: www. triquint.com (972)994 - 8465 fax (972)994 - 8504 info - mmw@tqs.com ordering information part package style tga4030 - sm 3x3 qfn recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 ? c/sec 3 ? c/sec activation time and temperature 60 C 120 sec @ 140 C 160 ? c 60 C 180 sec @ 150 C 200 ? c time above melting point 60 C 150 sec 60 C 150 sec max peak temperature 240 ? c 260 ? c time within 5 ? c of peak temperature 10 C 20 sec 10 C 20 sec ramp-down rate 4 C 6 ? c/sec 4 C 6 ? c/sec

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